(metal can) package, which provides excellent shielding for RF stability. High Gain & Low Noise
Operating the 3SK41 beyond these limits can cause permanent damage to the GaAs structure. Engineers must design biasing networks that keep the transistor well within these boundary thresholds at an ambient temperature ( Drain-Source Voltage VDScap V sub cap D cap S end-sub Gate 1-Source Voltage VG1Scap V sub cap G 1 cap S end-sub Gate 2-Source Voltage VG2Scap V sub cap G 2 cap S end-sub Drain Current IDcap I sub cap D Total Power Dissipation PDcap P sub cap D 200 to 250 Channel Temperature Tchcap T sub c h end-sub ∘Craised to the composed with power C Storage Temperature Range Tstgcap T sub s t g end-sub -55 to +125 ∘Craised to the composed with power C 4. Electrical Characteristics
Since the is discontinued, you have three options: 3sk41 datasheet
The reveals a component that was far ahead of its time. With its 20V breakdown, 200mW dissipation, and 3dB noise figure, it enabled affordable, high-performance VHF radios for decades. While you shouldn't use it in a new mass-production design, understanding the 3SK41 is essential for restoring classic Sony, Kenwood, and Icom receivers.
[ DC Power Bus (up to 400V) ] | | +----+----+ | D | | | [Gate]----| G 3SK | Driver | | IC | S | +----+----+ | +-----> [ Load (Motor/Lamp) ] | GND (metal can) package, which provides excellent shielding for
Used as an RF amplifier to boost weak television signals before mixing.
This public link is valid for 7 days and shares a thread, including any personal information you added. This link or copies made by others cannot be deleted. If you share with third parties, their policies apply. Can’t copy the link right now. Try again later. 3SK41 NEC/HITACHI/MOTOROLA CAN-4 Transistors [ DC Power Bus (up to 400V) ]
In superheterodyne receivers, the dual-gate structure allows one gate to receive the RF (Radio Frequency) signal and the other to receive the LO (Local Oscillator) signal, mixing them with high isolation and low noise. Key Performance Features
The dual-gate structure allows for superior gain control (AGC) and high stability by reducing the internal capacitance between the drain and the primary gate. www.jotrin.ru The "Deep Story": A Relic of the Analog Era
(Note: Always verify the pinout with the specific manufacturer’s marking, as some variations exist.) 5. Common Applications